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DIM1600FSM17-A000
DIM1600FSM17-A000
Single Switch IGBT Module
Replaces May 2001,, version DS5455-1.1 DS5455-2.0 March 2002
FEATURES
s s s s
10s Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates
KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK)
1700V 2.7V 1600A 3200A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
External connection
s s s
High Reliability Inverters Motor Controllers Traction Drives
Aux C
C1
C2
The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM1600FSM17-A000 is a single switch 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10s short circuit withstand. This module is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
G Aux E E1 E2
External connection
Fig. 1 Single switch circuit diagram
Aux C
E1
C1
ORDERING INFORMATION
Order As: DIM1600FSM17-A000 Note: When ordering, please use the whole part number.
Aux E
G E2 C2
Outline type code: F (See package details for further information) Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1600FSM17-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax I2t Visol QPD Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value Isolation voltage - per module Partial discharge - per module Tcase = 75C 1ms, Tcase = 105C Tcase = 25C, Tj = 150C VR = 0, tp = 10ms, Tvj = 125C Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287. V1 = 1500V, V2 = 1100V, 50Hz RMS VGE = 0V Test Conditions Max. 1700 20 1600 3200 13.9 480 4000 10 Units V V A A kW kA2s V pC
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1600FSM17-A000
THERMAL AND MECHANICAL RATINGS
Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Symbol Rth(j-c) AlN AlSiC 20mm 10mm 175 Parameter Thermal resistance - transistor Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Tj Junction temperature Mounting torque 5Nm (with mounting grease) Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 Electrical connections - M8 -40 150 125 125 5 2 10 C C C Nm Nm Nm 8 C/kW 20 C/kW Min. Typ. Max. 9 Units C/kW
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1600FSM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = 20V, VCE = 0V IC =80mA, VGE = VCE VGE = 15V, IC = 1600A VGE = 15V, IC = 1600A, , Tcase = 125C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF =1600A IF = 1600A, Tcase = 125C Cies LM RINT SCData Input capacitance Module inductance - per arm Internal transistor resistance - per arm Short circuit. ISC VCE = 25V, VGE = 0V, f = 1MHz Tj = 125C, VCC = 1000V, tp 10s, VCE(max) = VCES - L*. di/dt IEC 60747-9 Note: Measured at the power busbars and not the auxiliary terminals) * L is the circuit inductance + LM I1 I2 Min. 4.5 Typ. 5.5 2.7 3.4 2.2 2.3 120 15 0.27 7400 6400 Max. 2 50 8 6.5 3.2 4.0 1600 3200 2.5 2.6 Units mA mA A V V V A A V V nF nH m A A
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1600FSM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qg Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Gate charge Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 1600, VR = 50% VCES, dIF/dt = 8000A/s Test Conditions IC = 1600A VGE = 15V VCE = 900V RG(ON) = RG(OFF) =1.5 L ~ 60nH Min. Typ. 1400 200 500 300 200 300 18 400 1000 200 Max. Units ns ns mJ ns ns mJ C C A mJ
Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 1600, VR = 50% VCES, dIF/dt = 7000A/s Test Conditions IC = 1600A VGE = 15V VCE = 900V RG(ON) = RG(OFF) =1.5 L ~ 60nH Min. Typ. 1600 250 650 400 250 600 600 1050 400 Max. Units ns ns mJ ns ns mJ C A mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1600FSM17-A000
TYPICAL CHARACTERISTICS
3600
3200 Vce is measured at power busbars
and not the auxiliary terminals
Common emitter. Tcase = 25C
3600
3200 Vce is measured at power busbars
and not the auxiliary terminals
Common emitter. Tcase = 125C
2800
Collector current, Ic - (A)
2800
Collector current, Ic - (A)
2400 2000 1600 1200 800 400 0 VGE = 20V 15V 12V 10V 0 0.5 1 1.5 2 2.5 3 3.5 4 Collector-emitter voltage, Vce - (V) 4.5 5
2400 2000
1600 1200 800 400 0 0 VGE = 20V 15V 12V 10V 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
700
2000 1800 1600
Conditions: Vce = 900V T = 125C 600 Rc = 1.5 g 500
Conditions: Vce = 900V IC = 1600A Tc = 125C
Switching energy - (mJ)
Switching energy - (mJ)
1400 1200 1000 800 600 400 200 0 Eon Eoff Erec 0 1 2 3 4 5 6 7 8
400
300
200 Eon 100 Eoff Erec 0 0 200 400 600 800 1000 1200 Collector current, IC - (A) 1400 1600
Gate resistance, Rg - (Ohms)
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1600FSM17-A000
3200 2800
3500
VF is measured at power busbars and not the auxiliary terminals
3000
Tj = 25C 2400 2000 Tj = 125C 1600
Collector current, IC - (A)
Foward current, IF - (A)
2500
Chip
2000 Module 1500
1200 800 400 0 0
1000
500
Tcase = 125C Vge = 15V Rg(min) = 1.5 0 200 400 600 800 1000 1200 1400 1600 1800
0
0.5
2.0 1.0 1.5 2.5 Foward voltage, VF - (V)
3.0
3.5
Collector-emitter voltage, Vce - (V)
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
1600 1400 1200
Reverse current, IR - (A)
10000
1000
1000 800 600 400 200 Tj = 125C 0 0 400 1200 800 Reverse voltage, VR - (V) 1600 2000
Collector current, IC - (A)
100
IC(max) DC
tp = 50s tp = 100s tp = 1 ms
10
1 1
Tvj = 125C, Tc = 75C 10 100 1000 Collector emitter voltage, Vce - (V) 10000
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Forward bias safe operating area
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1600FSM17-A000
100 Transient thermal impedance, Zth (j-c) - (C/kW )
2800
2400
Diode Transistor DC collector current, IC - (A) 10
2000
10
1600
1200
1.0 1 Ri (C/KW) 0.2195 i (ms) 0.045 Ri (C/KW) 0.7806 i (ms) 0.0063516 0.01 2 1.5968 2.8869 2.8713 1.4746 3 2.0732 21.7141 3.4995 13.9664 1 4 5.1178 152.6381 12.834 111.7517
800
IGBT Diode
400
0.1 0.001
0.1 Pulse width, tp - (s)
0 0
20
40 60 80 100 120 Case temperature, Tcase - (C)
140
160
Fig. 11 Transient thermal impedance
Fig. 12 DC current rating vs case temperature
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1600FSM17-A000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
62 15 5 15
62
6 E1 Aux C
16 2.5
C1
57
Aux E
18.5
E2
C2
14.5 11 6x M4
35
20 4x M8
38 28
5 140 Main Terminal screw plastic hole depth (M8) = 16.8 0.3 Auxiliary and Gate pin plastic hole depth (M4) = 9 0.3 Copper terminal thickness, Main Terminal pins = 1.5 0.1 Copper terminal thickness, Auxiliary and Gate pin = 0.9 0.1 Nominal weight: 1050g Module outline type code: F
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
31.5
43.3 57 65
G
18
6x O7
65
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DIM1600FSM17-A000
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France & Spain: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2002 Publication No. DS5455-2 Issue No. 2.0 March 2002 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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